A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics

Yize Wang, Guangyi Lu, Yuan Wang 0001. A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics. IEEE Access, 8:64730-64738, 2020. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.