Unidirectional p-GaN gate HEMT with composite source-drain field plates

Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, JinCheng Zhang, Yue Hao. Unidirectional p-GaN gate HEMT with composite source-drain field plates. Science in China Series F: Information Sciences, 65(2), 2022. [doi]

@article{WangMZHCDZWZZH22,
  title = {Unidirectional p-GaN gate HEMT with composite source-drain field plates},
  author = {Haiyong Wang and Wei Mao and Shenglei Zhao and Yuanhao He and Jiabo Chen and Ming Du and Xuefeng Zheng and Chong Wang and Chunfu Zhang and JinCheng Zhang and Yue Hao},
  year = {2022},
  doi = {10.1007/s11432-021-3267-3},
  url = {https://doi.org/10.1007/s11432-021-3267-3},
  researchr = {https://researchr.org/publication/WangMZHCDZWZZH22},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {65},
  number = {2},
}