High temperature behaviour of GaN-on-Si high power MISHEMT devices

Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere. High temperature behaviour of GaN-on-Si high power MISHEMT devices. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 302-305, IEEE, 2012. [doi]

@inproceedings{WellekensVKZWMSHD12,
  title = {High temperature behaviour of GaN-on-Si high power MISHEMT devices},
  author = {Dirk Wellekens and Rafael Venegas and Xuanwu Kang and Mohammed Zahid and Tian-Li Wu and Denis Marcon and Puneet Srivastava and Marleen Van Hove and Stefaan Decoutere},
  year = {2012},
  doi = {10.1109/ESSDERC.2012.6343393},
  url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343393},
  researchr = {https://researchr.org/publication/WellekensVKZWMSHD12},
  cites = {0},
  citedby = {0},
  pages = {302-305},
  booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-1707-8},
}