A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology

Sergej Werner, Danish Kalim, Renato Negra. A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology. In 10th IEEE International NEWCAS Conference, Montreal, QC, Canada, June 17-20, 2012. pages 397-400, IEEE, 2012. [doi]

@inproceedings{WernerKN12,
  title = {A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology},
  author = {Sergej Werner and Danish Kalim and Renato Negra},
  year = {2012},
  doi = {10.1109/NEWCAS.2012.6329040},
  url = {https://doi.org/10.1109/NEWCAS.2012.6329040},
  researchr = {https://researchr.org/publication/WernerKN12},
  cites = {0},
  citedby = {0},
  pages = {397-400},
  booktitle = {10th IEEE International NEWCAS Conference, Montreal, QC, Canada, June 17-20, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-0857-1},
}