A V-band power amplifier with 11.6dB gain and 7.8% PAE in GaAs 0.15µm pHEMT process technology

Ming-Wei Wu, Chien-Pai Wu, Yen-Chung Chiang. A V-band power amplifier with 11.6dB gain and 7.8% PAE in GaAs 0.15µm pHEMT process technology. In 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012, Kaohsiung, Taiwan, December 2-5, 2012. pages 192-195, IEEE, 2012. [doi]

@inproceedings{WuWC12-2,
  title = {A V-band power amplifier with 11.6dB gain and 7.8% PAE in GaAs 0.15µm pHEMT process technology},
  author = {Ming-Wei Wu and Chien-Pai Wu and Yen-Chung Chiang},
  year = {2012},
  doi = {10.1109/APCCAS.2012.6419004},
  url = {http://dx.doi.org/10.1109/APCCAS.2012.6419004},
  researchr = {https://researchr.org/publication/WuWC12-2},
  cites = {0},
  citedby = {0},
  pages = {192-195},
  booktitle = {2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012, Kaohsiung, Taiwan, December 2-5, 2012},
  publisher = {IEEE},
}