Bi-Wu, Haonan Zhu, Ke Chen 0018, Chenggang Yan 0002, Weiqiang Liu 0001. MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM. IEEE Trans. Circuits Syst. I Regul. Pap., 70(6):2412-2424, 2023. [doi]
@article{WuZ00023,
title = {MLiM: High-Performance Magnetic Logic in-Memory Scheme With Unipolar Switching SOT-MRAM},
author = {Bi-Wu and Haonan Zhu and Ke Chen 0018 and Chenggang Yan 0002 and Weiqiang Liu 0001},
year = {2023},
doi = {10.1109/TCSI.2023.3254607},
url = {https://doi.org/10.1109/TCSI.2023.3254607},
researchr = {https://researchr.org/publication/WuZ00023},
cites = {0},
citedby = {0},
journal = {IEEE Trans. Circuits Syst. I Regul. Pap.},
volume = {70},
number = {6},
pages = {2412-2424},
}