A 28nm 32Kb SRAM Computing-in-Memory Macro With Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation

Kanglin Xiao, Xiaoxin Cui, Xin Qiao, Jiahao Song, Haoyang Luo, Xin'an Wang, Yuan Wang 0001. A 28nm 32Kb SRAM Computing-in-Memory Macro With Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation. IEEE Trans. Circuits Syst. II Express Briefs, 70(6):1816-1820, June 2023. [doi]

@article{XiaoCQSLWW23,
  title = {A 28nm 32Kb SRAM Computing-in-Memory Macro With Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation},
  author = {Kanglin Xiao and Xiaoxin Cui and Xin Qiao and Jiahao Song and Haoyang Luo and Xin'an Wang and Yuan Wang 0001},
  year = {2023},
  month = {June},
  doi = {10.1109/TCSII.2023.3234620},
  url = {https://doi.org/10.1109/TCSII.2023.3234620},
  researchr = {https://researchr.org/publication/XiaoCQSLWW23},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. Circuits Syst. II Express Briefs},
  volume = {70},
  number = {6},
  pages = {1816-1820},
}