Comparison of switching performance between GaN and SiC MOSFET via 13. 56MHz Half-bridge Inverter - researchr publication authors

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Yi Xiong, Aoi Oyane, Tengfei Ou, Thilak Senanayake, Jun Imaoka, Masayoshi Yamamoto. Comparison of switching performance between GaN and SiC MOSFET via 13. 56MHz Half-bridge Inverter. In 29th IEEE International Symposium on Industrial Electronics, ISIE 2020, Delft, The Netherlands, June 17-19, 2020. pages 672-676, IEEE, 2020. [doi]

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