CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities - researchr publication authors

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Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert. CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. In International Conference on IC Design and Technology, ICICDT 2021, Dresden, Germany, September 15-17, 2021. pages 1-4, IEEE, 2021. [doi]

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