A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy

Rahul Kumar Yadav, Farabi Ibne Jamal, Mohamed Eissa, Jan Wessel, Dietmar Kissinger. A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy. In 15th IEEE International New Circuits and Systems Conference, NEWCAS 2017, Strasbourg, France, June 25-28, 2017. pages 285-288, IEEE, 2017. [doi]

@inproceedings{YadavJEWK17,
  title = {A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy},
  author = {Rahul Kumar Yadav and Farabi Ibne Jamal and Mohamed Eissa and Jan Wessel and Dietmar Kissinger},
  year = {2017},
  doi = {10.1109/NEWCAS.2017.8010161},
  url = {https://doi.org/10.1109/NEWCAS.2017.8010161},
  researchr = {https://researchr.org/publication/YadavJEWK17},
  cites = {0},
  citedby = {0},
  pages = {285-288},
  booktitle = {15th IEEE International New Circuits and Systems Conference, NEWCAS 2017, Strasbourg, France, June 25-28, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-4991-2},
}