A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor - researchr publication authors

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Dharmendra Singh Yadav, Dheeraj Sharma, Sukeshni Tirkey, Deepak Soni, Deepak G. Sharma, Shriya Bajpai, Neeraj Sharma. A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor. In IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2017, Bhopal, India, December 18-20, 2017. pages 195-199, IEEE, 2017. [doi]

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