Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara. Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices. In IEEE Custom Integrated Circuits Conference, CICC 2009, San Jose, California, USA, 13-16 September, 2009, Proceedings. pages 531-534, IEEE, 2009. [doi]
@inproceedings{YamamotoSS09,
title = {Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices},
author = {Shuu'ichirou Yamamoto and Yusuke Shuto and Satoshi Sugahara},
year = {2009},
doi = {10.1109/CICC.2009.5280761},
url = {http://dx.doi.org/10.1109/CICC.2009.5280761},
researchr = {https://researchr.org/publication/YamamotoSS09},
cites = {0},
citedby = {0},
pages = {531-534},
booktitle = {IEEE Custom Integrated Circuits Conference, CICC 2009, San Jose, California, USA, 13-16 September, 2009, Proceedings},
publisher = {IEEE},
isbn = {978-1-4244-4071-9},
}