A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications

Dongyang Yan, Yang Zhang 0081, Mark Ingels, Piet Wambacq. A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications. In 18th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023, Valencia, Spain, June 18-21, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{YanZIW23,
  title = {A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications},
  author = {Dongyang Yan and Yang Zhang 0081 and Mark Ingels and Piet Wambacq},
  year = {2023},
  doi = {10.1109/PRIME58259.2023.10161737},
  url = {https://doi.org/10.1109/PRIME58259.2023.10161737},
  researchr = {https://researchr.org/publication/YanZIW23},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {18th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023, Valencia, Spain, June 18-21, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-0320-9},
}