Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET

Juefei Yang, Saeed Jahdi, Bernard H. Stark, Ruizhu Wu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez. Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET. In IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada, October 13-16, 2021. pages 1-6, IEEE, 2021. [doi]

@inproceedings{YangJSWAG21,
  title = {Impact of Temperature and Switching Rate on Properties of Crosstalk on Symmetrical & Asymmetrical Double-trench SiC Power MOSFET},
  author = {Juefei Yang and Saeed Jahdi and Bernard H. Stark and Ruizhu Wu and Olayiwola Alatise and Jose Angel Ortiz Gonzalez},
  year = {2021},
  doi = {10.1109/IECON48115.2021.9589773},
  url = {https://doi.org/10.1109/IECON48115.2021.9589773},
  researchr = {https://researchr.org/publication/YangJSWAG21},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada, October 13-16, 2021},
  publisher = {IEEE},
  isbn = {978-1-6654-3554-3},
}