The following publications are possibly variants of this publication:
- Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOSTsuyoshi Sugiura, Toshihiko Yoshimasu. ieicetc, 106(7):382-390, July 2023. [doi]
- A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOIToshihiko Yoshimasu, Mengchu Fang, Tsuyoshi Sugiura. ieiceta, 104-A(2):477-483, 2021. [doi]
- High Efficiency Open Collector Adaptive Bias SiGe HBT Differential Power AmplifierKuei-Cheng Lin, Tsung-Yu Yang, Kuan-Yu Chen, Hwann-Kaeo Chiou. ieicet, 89-C(11):1704-1707, 2006. [doi]