A 300 mV 10 MHz 4 kb 10T subthreshold SRAM for ultralow-power application

Wei-Bin Yang, Chi-Hsiung Wang, I.-Ting Chuo, Huang-Hsuan Hsu. A 300 mV 10 MHz 4 kb 10T subthreshold SRAM for ultralow-power application. In International Symposium on Intelligent Signal Processing and Communications Systems, ISPACS 2012, Tamsui, New Taipei City, Taiwan, November 4-7, 2012. pages 604-608, IEEE, 2012. [doi]

@inproceedings{YangWCH12,
  title = {A 300 mV 10 MHz 4 kb 10T subthreshold SRAM for ultralow-power application},
  author = {Wei-Bin Yang and Chi-Hsiung Wang and I.-Ting Chuo and Huang-Hsuan Hsu},
  year = {2012},
  doi = {10.1109/ISPACS.2012.6473561},
  url = {http://dx.doi.org/10.1109/ISPACS.2012.6473561},
  researchr = {https://researchr.org/publication/YangWCH12},
  cites = {0},
  citedby = {0},
  pages = {604-608},
  booktitle = {International Symposium on Intelligent Signal Processing and Communications Systems, ISPACS 2012, Tamsui, New Taipei City, Taiwan, November 4-7, 2012},
  publisher = {IEEE},
  isbn = {978-1-4673-5083-9},
}