Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)

Fei Yu, Qi-Ming Zeng, Rong Song, Jian Tang, Ya-Ting Wu. Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs). In Liang Zhao, Guanglu Sun, Kenli Li 0001, Zheng Xiao, Lipo Wang, editors, 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery ICNC-FSKD 2023, Harbin, China, July 29-31, 2023. pages 1-6, IEEE, 2023. [doi]

@inproceedings{YuZSTW23,
  title = {Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)},
  author = {Fei Yu and Qi-Ming Zeng and Rong Song and Jian Tang and Ya-Ting Wu},
  year = {2023},
  doi = {10.1109/ICNC-FSKD59587.2023.10281163},
  url = {https://doi.org/10.1109/ICNC-FSKD59587.2023.10281163},
  researchr = {https://researchr.org/publication/YuZSTW23},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery ICNC-FSKD 2023, Harbin, China, July 29-31, 2023},
  editor = {Liang Zhao and Guanglu Sun and Kenli Li 0001 and Zheng Xiao and Lipo Wang},
  publisher = {IEEE},
  isbn = {979-8-3503-0439-8},
}