A temperature sensor with 3σ inaccuracy of +0.5/-0.75 °C and energy per conversion of 0.65 μJ using a 0.18 μm CMOS technology

Mikail Yücetas, Mika Pulkkinen, Jakub Gronicz, Kari Halonen. A temperature sensor with 3σ inaccuracy of +0.5/-0.75 °C and energy per conversion of 0.65 μJ using a 0.18 μm CMOS technology. In 2013 NORCHIP, Vilnius, Lithuania, November 11-12, 2013. pages 1-4, IEEE, 2013. [doi]

@inproceedings{YucetasPGH13,
  title = {A temperature sensor with 3σ inaccuracy of +0.5/-0.75 °C and energy per conversion of 0.65 μJ using a 0.18 μm CMOS technology},
  author = {Mikail Yücetas and Mika Pulkkinen and Jakub Gronicz and Kari Halonen},
  year = {2013},
  doi = {10.1109/NORCHIP.2013.6702033},
  url = {http://dx.doi.org/10.1109/NORCHIP.2013.6702033},
  researchr = {https://researchr.org/publication/YucetasPGH13},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {2013 NORCHIP, Vilnius, Lithuania, November 11-12, 2013},
  publisher = {IEEE},
}