Properties of silicon carbide schottky diodes under self-heating influence

Janusz Zarebski, Jacek Dabrowski 0002. Properties of silicon carbide schottky diodes under self-heating influence. In 19th European Conference on Circuit Theory and Design, ECCTD 2009, Antalya, Turkey, August 23-27, 2009. pages 253-256, IEEE, 2009. [doi]

@inproceedings{ZarebskiD09,
  title = {Properties of silicon carbide schottky diodes under self-heating influence},
  author = {Janusz Zarebski and Jacek Dabrowski 0002},
  year = {2009},
  doi = {10.1109/ECCTD.2009.5274939},
  url = {https://doi.org/10.1109/ECCTD.2009.5274939},
  researchr = {https://researchr.org/publication/ZarebskiD09},
  cites = {0},
  citedby = {0},
  pages = {253-256},
  booktitle = {19th European Conference on Circuit Theory and Design, ECCTD 2009, Antalya, Turkey, August 23-27, 2009},
  publisher = {IEEE},
  isbn = {978-1-4244-3896-9},
}