Investigation on hot-carrier-induced degradation of SOI NLIGBT

Shifeng Zhang, Yan Han, Koubao Ding, Bin Zhang, Jiaxian Hu. Investigation on hot-carrier-induced degradation of SOI NLIGBT. Microelectronics Reliability, 51(6):1097-1104, 2011. [doi]

@article{ZhangHDZH11,
  title = {Investigation on hot-carrier-induced degradation of SOI NLIGBT},
  author = {Shifeng Zhang and Yan Han and Koubao Ding and Bin Zhang and Jiaxian Hu},
  year = {2011},
  doi = {10.1016/j.microrel.2011.02.009},
  url = {http://dx.doi.org/10.1016/j.microrel.2011.02.009},
  researchr = {https://researchr.org/publication/ZhangHDZH11},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {51},
  number = {6},
  pages = {1097-1104},
}