Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

Li Zhang, Shiqi Ji, Shida Gu, Xingxuan Huang, James Everette Palmer, William Giewont, Fei Fred Wang, Leon M. Tolbert. Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter. IEEE Transactions on Industrial Electronics, 68(7):5712-5724, 2021. [doi]

@article{ZhangJGHPGWT21,
  title = {Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter},
  author = {Li Zhang and Shiqi Ji and Shida Gu and Xingxuan Huang and James Everette Palmer and William Giewont and Fei Fred Wang and Leon M. Tolbert},
  year = {2021},
  doi = {10.1109/TIE.2020.3000131},
  url = {https://doi.org/10.1109/TIE.2020.3000131},
  researchr = {https://researchr.org/publication/ZhangJGHPGWT21},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Industrial Electronics},
  volume = {68},
  number = {7},
  pages = {5712-5724},
}