Jiubai Zhang, Xiaoqing Wu, Xilin Yi, Jiaxun Lv, Yajuan He. A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations. In IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{ZhangWYLH19-0,
title = {A Subthreshold 10T SRAM Cell with Enhanced Read and Write Operations},
author = {Jiubai Zhang and Xiaoqing Wu and Xilin Yi and Jiaxun Lv and Yajuan He},
year = {2019},
doi = {10.1109/ISCAS.2019.8702371},
url = {https://doi.org/10.1109/ISCAS.2019.8702371},
researchr = {https://researchr.org/publication/ZhangWYLH19-0},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2019, Sapporo, Japan, May 26-29, 2019},
publisher = {IEEE},
isbn = {978-1-7281-0397-6},
}