Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers

Hongbo Zhao, Dipen Narendra Dalal, Xiongfei Wang, Jannick Kjær Jørgensen, Christian Uhrenfeldt, Szymon Beczkowski, Stig Munk-Nielsen. Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers. In IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, October 14-17, 2019. pages 5147-5153, IEEE, 2019. [doi]

@inproceedings{ZhaoDWJUBM19,
  title = {Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers},
  author = {Hongbo Zhao and Dipen Narendra Dalal and Xiongfei Wang and Jannick Kjær Jørgensen and Christian Uhrenfeldt and Szymon Beczkowski and Stig Munk-Nielsen},
  year = {2019},
  doi = {10.1109/IECON.2019.8926673},
  url = {https://doi.org/10.1109/IECON.2019.8926673},
  researchr = {https://researchr.org/publication/ZhaoDWJUBM19},
  cites = {0},
  citedby = {0},
  pages = {5147-5153},
  booktitle = {IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society, Lisbon, Portugal, October 14-17, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-4878-6},
}