14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS

Dixian Zhao, Patrick Reynaert. 14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 248-249, IEEE, 2014. [doi]

@inproceedings{ZhaoR14-4,
  title = {14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS},
  author = {Dixian Zhao and Patrick Reynaert},
  year = {2014},
  doi = {10.1109/ISSCC.2014.6757420},
  url = {https://doi.org/10.1109/ISSCC.2014.6757420},
  researchr = {https://researchr.org/publication/ZhaoR14-4},
  cites = {0},
  citedby = {0},
  pages = {248-249},
  booktitle = {2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-0918-6},
}