Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory - researchr publication authors

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Xu Zheng, Jie Yu, Wenxuan Sun, Jinru Lai, Danian Dong, Guozhong Xing, Xiaoxin Xu. Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory. In 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021, Zhuhai, China, November 24-26, 2021. pages 247-248, IEEE, 2021. [doi]

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