Keji Zhou, Xinru Jia, Chenyang Zhao, Xumeng Zhang, Guangjian Wu, Chen Mu, Haozhe Zhu, Yanting Ding, Chixiao Chen, Xiaoyong Xue, Xiaoyang Zeng, Qi Liu 0010. A 28 nm 81 Kb 59-95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output. IEEE J. Emerg. Sel. Topics Circuits Syst., 12(4):846-857, 2022. [doi]
@article{ZhouJZZWMZDCXZL22,
title = {A 28 nm 81 Kb 59-95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output},
author = {Keji Zhou and Xinru Jia and Chenyang Zhao and Xumeng Zhang and Guangjian Wu and Chen Mu and Haozhe Zhu and Yanting Ding and Chixiao Chen and Xiaoyong Xue and Xiaoyang Zeng and Qi Liu 0010},
year = {2022},
doi = {10.1109/JETCAS.2022.3196678},
url = {https://doi.org/10.1109/JETCAS.2022.3196678},
researchr = {https://researchr.org/publication/ZhouJZZWMZDCXZL22},
cites = {0},
citedby = {0},
journal = {IEEE J. Emerg. Sel. Topics Circuits Syst.},
volume = {12},
number = {4},
pages = {846-857},
}