Effect of Metal oxide semiconductor field-effect transistors threshold voltage variation on high-performance circuits

Siva G. Narendra. Effect of Metal oxide semiconductor field-effect transistors threshold voltage variation on high-performance circuits. PhD thesis, Massachusetts Institute of Technology, Cambridge, MA, USA, 2002. [doi]

@phdthesis{ndltd-1622,
  title = {Effect of Metal oxide semiconductor field-effect transistors threshold voltage variation on high-performance circuits},
  author = {Siva G. Narendra},
  year = {2002},
  url = {http://hdl.handle.net/1721.1/8341},
  note = {ndltd.org (oai:dspace.mit.edu:1721.1/8341)},
  researchr = {https://researchr.org/publication/ndltd-1622},
  cites = {0},
  citedby = {0},
  school = {Massachusetts Institute of Technology, Cambridge, MA, USA},
}