Theodore L. Tewksbury. Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps. PhD thesis, Massachusetts Institute of Technology, Cambridge, MA, USA, 1992. [doi]
@phdthesis{ndltd-2084,
title = {Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps},
author = {Theodore L. Tewksbury},
year = {1992},
url = {http://dspace.mit.edu/handle/1721.1/13238},
note = {ndltd.org (oai:dspace.mit.edu:1721.1/13238)},
researchr = {https://researchr.org/publication/ndltd-2084},
cites = {0},
citedby = {0},
school = {Massachusetts Institute of Technology, Cambridge, MA, USA},
}