Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors

Ling Xia. Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors. PhD thesis, Massachusetts Institute of Technology, Cambridge, MA, USA, 2011. [doi]

@phdthesis{ndltd-30,
  title = {Impact of uniaxial strain on P-channel 111-V quantum-well field effect transistors},
  author = {Ling Xia},
  year = {2011},
  url = {http://hdl.handle.net/1721.1/71491},
  note = {ndltd.org (oai:dspace.mit.edu:1721.1/71491)},
  researchr = {https://researchr.org/publication/ndltd-30},
  cites = {0},
  citedby = {0},
  school = {Massachusetts Institute of Technology, Cambridge, MA, USA},
}