Yangbo Yi - researchr alias

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Viewing Publication 1 - 5 from 5

2016

Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshootJing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi. iet-cds, 10(5):410-416, 2016. [doi]

2014

Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitorsJing Zhu, Yunwu Zhang, Weifeng Sun, Yangbo Yi. iet-cds, 8(6):509-515, 2014. [doi]

2008

Bulk-silicon power integrated circuit technology for 192-channel data driver ICs of plasma display panelWeifeng Sun, Haisong Li, Yangbo Yi, Hong Wu, Longxing Shi. iet-cds, 2(2):277-280, 2008. [doi]

The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxideHong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi. mr, 48(11-12):1804-1808, 2008. [doi]

2006

Study of the power capability of LDMOS and the improved methodsZhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi. mr, 46(5-6):1001-1005, 2006. [doi]

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