| 913 | -- | 914 | Ru Huang, Bin Zhao, Runsheng Wang, YiMao Cai. Editor s note |
| 915 | -- | 935 | Yangyuan Wang. The driving force for development of IC and system in future: Reducing the power consumption and improving the ratio of performance to power consumption |
| 946 | -- | 958 | Bin (Frank) Yang, Ming Cai. Advanced strain engineering for state-of-the-art nanoscale CMOS technology |
| 980 | -- | 989 | T. P. Ma. Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics |
| 990 | -- | 1003 | Simon Deleonibus. Ultra-thin films and multigate devices architectures for future CMOS scaling |
| 1004 | -- | 1011 | Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet. Si nanowire FET and its modeling |
| 1012 | -- | 1025 | Mukta G. Farooq, Subramanian S. Iyer. 3D integration review |
| 1026 | -- | 1038 | Sai-Wang Tam, Mau-Chung Frank Chang. RF/wireless-interconnect: The next wave of connectivity |
| 1039 | -- | 1060 | Chihyuan Lu, Hang-Ting Lue, Yichou Chen. State-of-the-art flash memory devices and post-flash emerging memories |
| 1061 | -- | 1072 | Jing Li, Chung Lam. Phase change memory |
| 1073 | -- | 1086 | Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen, Yenya Hsu, Lijie Zhang, Pang-Shiu Chen, Weisu Chen, Peiyi Gu, Wenhsing Liu, Sumin Wang, Chen-Han Tsai, Shyh-Shyuan Sheu, Ming-Jinn Tsai, Ru Huang. Resistance switching for RRAM applications |
| 1087 | -- | 1093 | Mikael Östling. High power devices in wide bandgap semiconductors |
| 1094 | -- | 1102 | Xin Wang, Lin Lin, He Tang, Hui Zhao, Qiang Fang, Jian Liu, Siqiang Fan, Albert Z. Wang, Bin Zhao, Liwu Yang, Gary Zhang. Low power 3.1-10.6 GHz IR-UWB transmitter for Gbps wireless communications |