- Tiedong Cheng, Chenhui Wang, Zhanbao Shi. A capacitor-less FVF-LDO with dual-paths active frequency compensation and slew-rate enhancer circuit. Microelectronics Journal, 167:106924, 2026.
- Jizhang Chen, Jueping Cai, Yuxin Zhang, Yixin Yin, Boming Tang. A 1500 V/ μ s slew rate, 300 MHz GBW operational amplifier in 0.18- μ m HV BCD process for CMOS system-level monolithic integration. Microelectronics Journal, 167:106914, 2026.
- Wanying Li, Xiaopei Shi, Xuan Qi, Xinming Ma, Jiangtao Xu. A low-throughput multi-bit event-based vision sensor with event-intensity discrimination capability. Microelectronics Journal, 169:107040, 2026.
- Fangyuan Xu, Yina Shangguan, Xuan Guo 0003, Hanbo Jia, Yun Bai, Kai Sun, Xinyu Liu 0004. A low-voltage input buffer with linearity-enhancement scheme for a 500MS/s Pipelined-SAR ADC achieving SFDR > 79dBc. Microelectronics Journal, 167:106918, 2026.
- Faxiang Wang, Yuancheng Tang, Cong Wei. A discrete-time delta-sigma modulator using adaptive noise shaping enhancement technique. Microelectronics Journal, 168:106986, 2026.
- Yilong Dong, Xiaoteng Zhao, Yuhao Zhang, Hao Chang, Yuxing Qi, Zekai Yang, Chenxi Han, Hongzhi Liang, Yukui Yu, Shubin Liu 0001. A full-rate 8.2-to-15.1-Gb/s reference-less CDR using low-cost SAR-based frequency acquisition technique achieving 265ns acquisition time. Microelectronics Journal, 167:106944, 2026.
- Junkun Chen, Youzhi Gu, Miaomiao Xu, Yangxin Xiang, Yongzhen Chen, Cuixia Wang, Jiangfeng Wu. A 70-Gb/s PAM-4 wireline transmitter with dynamic-bias-based pre-emphasis in 28-nm CMOS. Microelectronics Journal, 168:106956, 2026.
- Tong Li, Honglan Jiang, Qin Wang 0009, Jianfei Jiang 0001, Zhigang Mao. A power-efficient multiplier with fine-grained power management. Microelectronics Journal, 167:106923, 2026.
- Yu Wang, Xiuping Li, Yubing Li, Zemeng Huang, Ping Zhang. A high-gain power amplifier with divided-MOS-capacitance neutralization. Microelectronics Journal, 169:107034, 2026.
- Bo Yi 0003, Junfeng Duan, Shengnan Zhu, Wenbo Luo, Junji Cheng, Haimeng Huang, Hongqiang Yang. A Novel 2.7 kV 3C-SiC/Ga2O3 Hetero-Channel E-mode MISFET With BFOM up to 5.17 GW/cm2. Microelectronics Journal, 167:106955, 2026.