Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency

Neha Gupta 0003, Ajay Kumar 0004, Rishu Chaujar. Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency. In 2014 Fifth International Symposium on Electronic System Design, Surathkal, Mangalore, India, December 15-17, 2014. pages 192-196, IEEE, 2014. [doi]

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