Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications

Erfan Abbasian, Morteza Gholipour. Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. I. J. Circuit Theory and Applications, 49(4):970-989, 2021. [doi]

Abstract

Abstract is missing.