A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications - researchr publication

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Erfan Abbasian, Morteza Gholipour. A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. I. J. Circuit Theory and Applications, 50(5):1537-1556, 2022. [doi]

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