Basem M. Abdrahman, Hesham N. Ahmed, Khaled A. Shehata. Design and implementation of a 9W, 0.3-3.7 GHz linear power amplifier using GaN HEMT. In IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013. pages 594-597, IEEE, 2013. [doi]
@inproceedings{AbdrahmanAS13,
title = {Design and implementation of a 9W, 0.3-3.7 GHz linear power amplifier using GaN HEMT},
author = {Basem M. Abdrahman and Hesham N. Ahmed and Khaled A. Shehata},
year = {2013},
doi = {10.1109/MWSCAS.2013.6674718},
url = {https://doi.org/10.1109/MWSCAS.2013.6674718},
researchr = {https://researchr.org/publication/AbdrahmanAS13},
cites = {0},
citedby = {0},
pages = {594-597},
booktitle = {IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013, Columbus, OH, USA, August 4-7, 2013},
publisher = {IEEE},
}