Koki Abe, Masataka Ishihara, Yusuke Hatakenaka, Kazuhiro Umetani, Eiji Hiraki. Feasibility of Parasitic Drain Inductance Design for Minimizing Switching Loss in Bridge Circuits Using GaN-FETs. In 30th IEEE International Symposium on Industrial Electronics, ISIE 2021, Kyoto, Japan, June 20-23, 2021. pages 1-5, IEEE, 2021. [doi]
@inproceedings{AbeIHUH21,
title = {Feasibility of Parasitic Drain Inductance Design for Minimizing Switching Loss in Bridge Circuits Using GaN-FETs},
author = {Koki Abe and Masataka Ishihara and Yusuke Hatakenaka and Kazuhiro Umetani and Eiji Hiraki},
year = {2021},
doi = {10.1109/ISIE45552.2021.9576373},
url = {https://doi.org/10.1109/ISIE45552.2021.9576373},
researchr = {https://researchr.org/publication/AbeIHUH21},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {30th IEEE International Symposium on Industrial Electronics, ISIE 2021, Kyoto, Japan, June 20-23, 2021},
publisher = {IEEE},
isbn = {978-1-7281-9023-5},
}