A New RF SiCMOS SDD Model for Quantifying Individual Contribution to Distortion from Transistor's Nonlinear Parameters - researchr publication authors

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Ali Abuelmaatti, Iain Thayne. A New RF SiCMOS SDD Model for Quantifying Individual Contribution to Distortion from Transistor's Nonlinear Parameters. In 13th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2006, Nice, France, December 10-13, 2006. pages 5-8, IEEE, 2006. [doi]

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