An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram. An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. Journal of Zhejiang University - Science C, 13(1):58-70, 2012. [doi]

Abstract

Abstract is missing.