A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation

Kenichi Agawa, Shin-ichiro Ishizuka, Hideaki Majima, Hiroyuki Kobayashi, Masayuki Koizumi, Takeshi Nagano, Makoto Arai, Yutaka Shimizu, Asuka Maki, Go Urakawa, Tadashi Terada, Nobuyuki Itoh, Mototsugu Hamada, Fumie Fujii, Tadamasa Kato, Sadayuki Yoshitomi, Nobuaki Otsuka. A 0.13 µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation. IEICE Transactions, 93-C(6):803-811, 2010. [doi]

Abstract

Abstract is missing.