Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

A. Agboton, N. Defrance, P. Altuntas, V. Avramovic, A. Cutivet, R. Ouhachi, J.-C. De Jaeger, S. Bouzid-Driad, H. Maher, M. Renvoise, P. Frijlink. Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 57-60, IEEE, 2013. [doi]

@inproceedings{AgbotonDAACOJBMRF13,
  title = {Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate},
  author = {A. Agboton and N. Defrance and P. Altuntas and V. Avramovic and A. Cutivet and R. Ouhachi and J.-C. De Jaeger and S. Bouzid-Driad and H. Maher and M. Renvoise and P. Frijlink},
  year = {2013},
  doi = {10.1109/ESSDERC.2013.6818818},
  url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818818},
  researchr = {https://researchr.org/publication/AgbotonDAACOJBMRF13},
  cites = {0},
  citedby = {0},
  pages = {57-60},
  booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
  publisher = {IEEE},
}