V. Aglieri, G. Lullo, M. Mosca, R. Macaluso, A. Zaffora, F. Di Franco, M. Santamaria, U. Lo Cicero, L. Razzari. Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors. In IEEE 4th International Forum on Research and Technology for Society and Industry, RTSI 2018, Palermo, Italy, September 10-13, 2018. pages 1-4, IEEE, 2018. [doi]
Abstract is missing.