Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

W. Ahn, S. H. Shin, C. Jiang, H. Jiang, M. A. Wahab, M. A. Alam. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits. Microelectronics Reliability, 81:262-273, 2018. [doi]

Abstract

Abstract is missing.