Phase-Change Memory using Cu2GeTe3 and Multiple Writing Technique for Neuromorphic Systems

Shihori Akane, Isao Horiuchi, Yasushi Hiroshima, Yasuhiko Nakashima, Mutsumi Kimura. Phase-Change Memory using Cu2GeTe3 and Multiple Writing Technique for Neuromorphic Systems. In IEEE International Conference on Consumer Electronics, ICCE 2023, Las Vegas, NV, USA, January 6-8, 2023. pages 1-5, IEEE, 2023. [doi]

Abstract

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