Characteristics degradation of the SiGe HBT under electromagnetic field stress

A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, 50(12):1961-1966, 2010. [doi]

Authors

A. Alaeddine

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M. Kadi

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K. Daoud

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B. Beydoun

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