A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, 50(12):1961-1966, 2010. [doi]
@article{AlaeddineKDB10-0, title = {Characteristics degradation of the SiGe HBT under electromagnetic field stress}, author = {A. Alaeddine and M. Kadi and K. Daoud and B. Beydoun}, year = {2010}, doi = {10.1016/j.microrel.2010.07.002}, url = {https://doi.org/10.1016/j.microrel.2010.07.002}, researchr = {https://researchr.org/publication/AlaeddineKDB10-0}, cites = {0}, citedby = {0}, journal = {Microelectronics Reliability}, volume = {50}, number = {12}, pages = {1961-1966}, }