A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. In Microelectronics Reliability. pages 1961-1966, 2010. [doi]
@inproceedings{AlaeddineKDB10,
title = {Characteristics degradation of the SiGe HBT under electromagnetic field stress},
author = {A. Alaeddine and M. Kadi and K. Daoud and B. Beydoun},
year = {2010},
doi = {10.1016/j.microrel.2010.07.002},
url = {http://dx.doi.org/10.1016/j.microrel.2010.07.002},
researchr = {https://researchr.org/publication/AlaeddineKDB10},
cites = {0},
citedby = {0},
pages = {1961-1966},
booktitle = {Microelectronics Reliability},
}