Mohmmad T. Alam, S. K. Islam. A modified model for Si/SiGe MOS-gate delta-doped HEMTs. Microelectronics Journal, 37(9):938-942, 2006. [doi]
@article{AlamI06,
title = {A modified model for Si/SiGe MOS-gate delta-doped HEMTs},
author = {Mohmmad T. Alam and S. K. Islam},
year = {2006},
doi = {10.1016/j.mejo.2006.01.010},
url = {http://dx.doi.org/10.1016/j.mejo.2006.01.010},
tags = {meta-model, Meta-Environment, model deltas},
researchr = {https://researchr.org/publication/AlamI06},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {37},
number = {9},
pages = {938-942},
}