Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer - researchr publication authors

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Mario Santo Alessandrino, Beatrice Carbone, Francesco Cordiano, Bruna Mazza, Alfio Russo, W. Coco, Massimo Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, Elisa Vitanza, Patrick Fiorenza. Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layer. In IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022. pages 61-1, IEEE, 2022. [doi]

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