Abstract is missing.
- Bias Temperature Instability (BTI) of High-Voltage Devices for Memory PeripheryJ. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, E. Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi. 1-6 [doi]
- Redundancy Effect on Electromigration Failure Time in Power Grid NetworksM. H. Lin, C. I. Lin, Y. C. Wang, Aaron Wang. 1-7 [doi]
- Revealing stresses for plasma induced damage detection in thick oxidesDaniel Beckmeier, Jifa Hao, Jake Choi, Matt Ring. 1-6 [doi]
- Method to evaluate off-state breakdown in scaled Tri-gate technologiesD. Nminibapiel, K. Joshi, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey. 1-6 [doi]
- Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor ArraysChristian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder. 1-8 [doi]
- Layer-to-Layer Endurance Variation of 3D NAND Flash MemoryMd Raquibuzzaman, Md. Mehedi Hasan, Aleksandar Milenkovic, Biswajit Ray. 1-5 [doi]
- Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory ComputingOm Prakash 0007, Kai Ni 0004, Hussam Amrouch. 1-10 [doi]
- Mission Profile Clustering Using a Universal Quantile CriterionA. Hirler, U. Abelein, M. Büttner, Ricarda Fischbach, Göran Jerke, Andreas Krinke, S. Simon. 1-9 [doi]
- Short-Circuit Capability with GaN HEMTs : InvitedDavide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura. 1-7 [doi]
- Recent US West Coast Wildfire Disasters: Impact on the Reliability Assessment of Optical TransceiversQuan Tran, Ronald Gayhardt, Tin Nguyen, Arif Zaman. 1-4 [doi]
- Reliability Analysis of Physically Unclonable Function by Using Aging Variability SimulationJae-Gyung Ahn, Jim Wesselkamper, Ryan S. W. Baek, Ping-Chin Yeh, Jonathan Chang, Jennifer Wong, Xin Wu. 1 [doi]
- Suppressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic ApplicationsKai Ni 0004, Om Prakash 0007, Simon Thomann, Zijian Zhao, Shan Deng, Hussam Amrouch. 1-8 [doi]
- Monolithic 3D Integration of Oxide Semiconductor FETs and Memory Devices for AI Acceleration (Invited)Masaharu Kobayashi. 1-6 [doi]
- Q&R On-Chip (QROC): A Unified, Oven-less and Scalable Circuit Reliability PlatformKetul B. Sutaria, Minki Cho, Anisur Rahman, Jihan Standfest, Rahul Sharma, Swaroop Kumar Namalapuri, Shiv Gupta, Bahar Ajdari, Ricardo Ascazubi, Balkaran Gill. 1-6 [doi]
- Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown VoltageR. Zhang, J. Liu, Q. Li, S. Pidaparthi, A. Edwards, C. Drowley, Y. Zhang. 1-8 [doi]
- A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection CapabilityJavier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve. 1-7 [doi]
- System-Level Simulation of Electromigration in a 3 nm CMOS Power Delivery Network: The Effect of Grid Redundancy, Metallization Stack and Standard-Cell CurrentsHouman Zahedmanesh, Ivan Ciofi, Odysseas Zografos, Kristof Croes, Mustafa Badaroglu. 1-7 [doi]
- Polarity Dependence and Metal Density Impact on Multi-Layer Inter-Level TDDB for High Voltage ApplicationYinghong Zhao, Ki-Don Lee, Manisha Sharma, Joonah Yoon, Rakesh Ranjan, Md Iqbal Mahmud, Caleb Dongkyan Kwon, Myungsoo Yeo. 1-4 [doi]
- The Relevance of Trapped Charge for Leakage and Random Telegraph Noise PhenomenaSara Vecchi, Paolo Pavan, Francesco Maria Puglisi. 1-6 [doi]
- Finding Suitable Gate Insulators for Reliable 2D FETsTheresia Knobloch, Yury Yu. Illarionov, Tibor Grasser. 2 [doi]
- Reliability, Availability, and Serviceability Challenges for Heterogeneous System DesignMajed Valad Beigi, Sudhanva Gurumurthi, Vilas Sridharan. 2 [doi]
- The Price of Secrecy: How Hiding Internal DRAM Topologies Hurts Rowhammer DefensesStefan Saroiu, Alec Wolman, Lucian Cojocar. 2 [doi]
- A Calibration-Free Synthesizable Odometer Featuring Automatic Frequency Dead Zone Escape and Start-up Glitch RemovalTahmida Islam, Junkyu Kim, Chris H. Kim, David Tipple, Michael Nelson, Robert Jin, Anis Jarrar. 2-1 [doi]
- Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination OptimizationBhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar. 2 [doi]
- A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced DegradationErnest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo. 2 [doi]
- Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD ProtectionJian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen. 2 [doi]
- Bias Temperature Instability on SiC n- and p-MOSFETs for High Temperature CMOS ApplicationsEmran K. Ashik, Sundar Babu Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, WoongJe Sung, Ayman A. Fayed, Anant K. Agarwal, Bongmook Lee. 3 [doi]
- Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitorsTadeu Mota Frutuoso, Xavier Garros, Jose Lugo-Alvarez, R. Kom Kammeugne, L. D. M. Zouknak, Abygaël Viey, W. van den Daele, Philippe Ferrari, Fred Gaillard. 3 [doi]
- Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network acceleratorsArtem Glukhov, Valerio Milo, Andrea Baroni, Nicola Lepri, Cristian Zambelli, Piero Olivo, Eduardo Pérez, Christian Wenger, Daniele Ielmini. 3 [doi]
- The Field-dependence Endurance Model and Its Mutual Effect in Hf-based FerroelectricsY.-K. Chang, P. J. Liao, S. H. Yeong, Y. M. Lin, J. H. Lee, C.-T. Lin, Z. Yu, W. Tsai, P. C. McIntyre. 3 [doi]
- SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETsPatrick Fiorenza, C. Bongiorno, A. Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte. 3 [doi]
- A Smart SRAM-Cell Array for the Experimental Study of Variability Phenomena in CMOS TechnologiesPablo Saraza-Canflanca, H. Carrasco-Lopez, A. Santana-Andreo, Javier Diaz-Fortuny, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández 0001. 3-1 [doi]
- Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETsMaximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser. 3 [doi]
- Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog ApplicationsPengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang. 3 [doi]
- Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network acceleratorsNicola Lepri, Artem Glukhov, Daniele Ielmini. 3 [doi]
- Sparse and Robust RRAM-based Efficient In-memory Computing for DNN InferenceJian Meng, Injune Yeo, Wonbo Shim, Li Yang, Deliang Fan, Shimeng Yu, Jae-sun Seo. 3 [doi]
- GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric FilmsYiming Qu, Yang Shen, Mingji Su, Jiwu Lu, Yi Zhao. 3 [doi]
- Investigation of reliability of NO nitrided SiC(1100) MOS devicesTakato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Mitsuru Sometani, Mitsuo Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. 3 [doi]
- Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited)Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten. 3 [doi]
- 22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliabilityGermain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula. 4 [doi]
- Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologiesP. Srinivasan 0002, Fernando Guarin, Enkhbayasgalan Gantsog, Harish Krishnaswamy, Arun Natarajan. 4 [doi]
- TM Packages and SystemsKathy Wei Yan, Po-Yao Lin, Sheng-Liang Kuo. 4 [doi]
- New Method to Perform TDDB Tests for Hybrid Bonding InterconnectsB. Ayoub, Stéphane Moreau, S. Lhostis, P. Lamontagne, H. Combeau, J. G. Mattei, H. Frémont. 4 [doi]
- Impact of TSV on TDDB Performance of Neighboring FinFET with HK/IL Gate StackingH. Zheng, Y. S. Sun, J.-L. Huang. 4 [doi]
- Reliability Investigation of W2W Hybrid Bonding Interface: Breakdown Voltage and Leakage MechanismLin Hou, Emmanuel Chery, Kristof Croes, Davide Tierno, Soon Aik Chew, Yangyin Chen, Peter Rakbin, Eric Beyne. 4 [doi]
- Reliability of CMOS-SOI power amplifiers for millimeter-wave 5G: the case for pMOS (Invited)Peter M. Asbeck, Sravya Alluri, Narek Rostomyan, Jefy Alex Jayamon. 4 [doi]
- Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectricsBarry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt. 4 [doi]
- RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave ApplicationsAarti Rathi, Abhisek Dixit, P. Srinivasan 0002, Oscar H. Gonzalez, Fernando Guarin. 4 [doi]
- Investigation of First Fire Effect on VTH Stability and Endurance in GeCTe SelectorP. C. Chang, P. J. Liao, D. W. Heh, C. Lee, D. H. Hou, Elia Ambrosi, C. H. Wu, H. Y. Lee, J. H. Lee, Xinyu Bao. 4 [doi]
- Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier ApplicationsJ. Hai, Florian Cacho, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould, Jeremie Forest, Vincent Knopik, Xavier Garros. 4 [doi]
- MTJ degradation in SOT-MRAM by self-heating-induced diffusionSimon Van Beek, Kaiming Cai, Siddharth Rao, Ganesh Jayakumar, Sebastien Couet, Nico Jossart, Adrian Chasin, Gouri Sankar Kar. 4 [doi]
- Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlationMilan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam Sung Kim, Luca Larcher. 4 [doi]
- A Novel Approach for Assessing Impact of Temperature Hot-Spots on Chip-Package Interaction ReliabilityR. Aggarwal, L. Jiang, S. Patra, N. Lajo, E. Kabir, R. Kasim. 4 [doi]
- An Aging Degradation Suppression Scheme at Constant Performance by Controlling Supply Voltage and Body Bias in a 65 nm Fully-Depleted Silicon-On-Insulator ProcessIkuo Suda, Ryo Kishida, Kazutoshi Kobayashi. 4-1 [doi]
- Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell StorageNavjeet Bagga, Kai Ni 0004, Nitanshu Chauhan, Om Prakash 0007, X. Sharon Hu, Hussam Amrouch. 5-1 [doi]
- A High Voltage Tolerant Supply Clamp for ESD Protection in a 45-nm SOI TechnologyShudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean-Jacques Hajjar, Elyse Rosenbaum. 5 [doi]
- Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated NanosheetsErik Bury, Adrian Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten. 5 [doi]
- Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier ReliabilityM. Hauser, P. Srinivasan 0002, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min. 5 [doi]
- Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited)Andreas Martin. 5 [doi]
- Performance Improvement and Reliability Physics in SiC MOSFETsT. Kimoto, K. Tachiki, A. Iijima, M. Kaneko. 5 [doi]
- ASM-ESD - A comprehensive physics-based compact model for ESD DiodesS. Khandelwal, D. Bavi. 5 [doi]
- Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-TemperatureFabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini. 5 [doi]
- Single-Event Latchup Vulnerability at the 7-nm FinFET NodeN. J. Pieper, Yoni Xiong, Alexandra Feeley, Dennis R. Ball, Bharat L. Bhuva. 5 [doi]
- Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETsMarcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, S. Cascino, A. Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini. 5 [doi]
- TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection CellsLaura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli. 6 [doi]
- Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technologyN. H. Lee, S. Lee, S. H. Kim, G. J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae. 6 [doi]
- Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR DevicesM. Monishmurali, Nagothu Karmel Kranthi, Gianluca Boselli, Mayank Shrivastava. 6 [doi]
- Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel TransistorsStanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer. 6 [doi]
- New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM TechnologyYong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang. 6 [doi]
- Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process VariabilitiesVinayak Bharat Naik, J.-H. Lim, Kazutaka Yamane, J. Kwon, Behin-Aein B., N. L. Chung, S. K, Lee Yong Hau, R. Chao, C. Chiang, Y. Huang, L. Pu, Yuichi Otani, Suk Hee Jang, Nivetha Balasankaran, Wah-Peng Neo, T. Ling, Jia Wen Ting, H. Yoon, J. Mueller, B. Pfefferling, O. Kallensee, T. Merbeth, Chim Seng Seet, J. Wong, Y. S. You, S. Soss, T. H. Chan, S. Y. Siah. 6 [doi]
- Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETsMichiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken. 6 [doi]
- Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel JunctionsLorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi. 6-1 [doi]
- NanoBridge Technology for Novoaltile FPGA and Memory Applications : (Invited)Munehiro Tada. 6 [doi]
- Recent Advances and Trends on Automotive Safety : (invited)Riccardo Mariani, Karl Greb. 7 [doi]
- Comparison of AC and DC BTI in SiC Power MOSFETsAmartya Ghosh, Osama O. Awadelkarim, Jifa Hao, Samia A. Suliman, Xinyu Wang. 7 [doi]
- Thermal-Neutron SER Mitigation by Cobalt-Contact in 7 nm Bulk-FinFET TechnologyTaiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida. 7 [doi]
- Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial EnvironmentYoni Xiong, Alexandra Feeley, N. J. Pieper, Dennis R. Ball, Balaji Narasimham, John Brockman, N. A. Dodds, S. A. Wender, Shi-Jie Wen, Rita Fung, Bharat L. Bhuva. 7 [doi]
- Universal Hot Carrier Degradation Model under DC and AC StressesChu Yan, Yaru Ding, Yiming Qu, Liang Zhao, Yi Zhao. 7 [doi]
- Endurance Evaluation on OTS-PCM Device using Constant Current Stress SchemeW. C. Chien, L. M. Gignac, Y. C. Chou, C.-H. Yang, N. Gong, H. Y. Ho, C. W. Yeh, H. Y. Cheng, W. Kim, I. T. Kuo, E. K. Lai, C. W. Cheng, L. Buzi, A. Ray, C. S. Hsu, R. L. Bruce, Matthew BrightSky, H. L. Lung. 7-1 [doi]
- Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM TechnologiesDa Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang. 7 [doi]
- First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate StructuresCheng-Lin Sung, Sheng-Ting Fan, Hang-Ting Lue, Wei-Chen Chen, Pei-Ying Du, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu. 7 [doi]
- Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4KLauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent 0004, Silvano De Franceschi, Tristan Meunier. 7 [doi]
- Accurate screening of defective oxide on SiC using consecutive multiple threshold-voltage measurementsH. Miki, M. Sagawa, Y. Mori, T. Murata, K. Kinoshita, K. Asaka, T. Oda. 8 [doi]
- Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation GeneralizedMd. Asaduz Zaman Mamun, Muhammad A. Alam. 8 [doi]
- Assessment of critical Co electromigration parametersO. Varela Pedreira, Melina Lofrano, Houman Zahedmanesh, Philippe J. Roussel, Marleen H. van der Veen, Veerle Simons, E. Chery, Ivan Ciofi, Kris Croes. 8 [doi]
- Runtime Test Solution for Adaptive Aging Compensation and Fail Operational Safety modeVincent Huard, F. Jacquet, Souhir Mhira, Lionel Jure, O. Montfort, M. Louvat, L. Zaia, F. Bertrand, E. Acacia, O. Caffin, H. Belhadj, O. Durand, N. Exibard, V. Bonnet, A. Charvier, P. Bernardi, R. Cantoro. 8 [doi]
- Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETsSatyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour. 8 [doi]
- A Method of Developing Qualification Plans for Board ProductsJeffrey Zhang, Antai Xu, Daniel Gitlin. 8 [doi]
- Novel methodology for temperature-aware electromigration assessment in on-chip power grid: simulations and experimental validation (Invited)Armen Kteyan, Valeriy Sukharev, Y. Yi, C. Kim. 8 [doi]
- New RC-Imbalance Failure Mechanism of Well Charging Damage and The Implemented RuleYu-Lin Chu, Hsi-Yu Kuo, Hung-Da Dai, Kuan-Hung Chen, Pei-Jung Lin, Chun-Ting Liao, Ta-Chun Lin, Ming Feng, Swercy Chiu, Victor Liang. 8 [doi]
- Reliability Qualification Challenges of SOCs in Advanced CMOS Process Nodes (Invited)Shou-En Liu, Jian Li, Deepak Nayak, Amit Marathe, Kaushik Balamukundhan, Vishal Gosavi, Ajaykumar Prajapati, Baha Kilic, Mengzhi Pang, Arpit Mittal. 8 [doi]
- Investigation of Terrestrial Neutron Induced Failure Rates in Silicon Carbide JFET Based Cascode FETsL. Fursin, P. Losee, Akin Akturk. 8 [doi]
- Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operationsEduardo Esmanhotto, Tifenn Hirtzlin, Niccolo Castellani, S. Martin, Bastien Giraud, François Andrieu, Jean-François Nodin, Damien Querlioz, Jean Michel Portal, Elisa Vianello. 8-1 [doi]
- Degradation mechanisms in Germanium Electro-Absorption ModulatorsArtemisia Tsiara, Alicja Lesniewska, Philippe Roussel, Srinivasan Ashwyn Srinivasan, Mathias Berciano, Marko Simicic, Marianna Pantouvaki, Joris Van Campenhout, Kristof Croes. 9 [doi]
- Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on SiliconPing-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf. 9 [doi]
- 12 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2K.-Y. Hsiang, C.-Y. Liao, Y. Y. Lin, Z.-F. Lou, C. Y. Lin, J. Y. Lee, F. S. Chang, Z. X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C. S. Chang, M. H. Lee. 9-1 [doi]
- GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and RecoveryQihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang. 10 [doi]
- Defect-controlled Resistance Degradation of Sputtered Lead Zirconate Titanate Thin FilmsKuan-Ting Ho, Daniel Monteiro Diniz Reis, Karla Hiller. 10 [doi]
- Modeling Hot-Electron Trapping in GaN-based HEMTsNicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 10 [doi]
- Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress ConditionM. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico. 10 [doi]
- Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltageC. Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant. 10 [doi]
- Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectorsTaras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar. 10-1 [doi]
- Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k TransistorsAlexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu. 10 [doi]
- Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k DielectricsErnest Y. Wu, Baozhen Li. 10 [doi]
- A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS TransistorsBikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy. 10 [doi]
- Putting AI to Work: A Practical and Simple Application to Improve 3D X-ray FAWilliam Harris, Allen Gu, Masako Terada. 10 [doi]
- Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical StressKookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf. 10 [doi]
- Power Cycling Reliability of SiC MOSFETs in Discrete and Module PackagesIvana Kovacevic-Badstuebner, Salvatore Race, Thomas Ziemann, Shweta Tiwari, Ulrike Grossner, Elena Mengotti, Enea Bianda, Joni P. A. Jormanainen. 10 [doi]
- Progressive Degradation Without Physical Failure During Mounting Due to Soft Overstress in Compound HBT for RF, Mobile, and Automotive ApplicationsHyeokjae Lee, Sanggi Ko, Ho-Joon Suh, Gina Jeong, Jung-Han Yeo, Hye Min Park, Hee-Kyeong Kim, Jong-Kwan Kim, Sung S. Chung, Youngboo Kim, Jisun Park, Hyungsoon Shin. 10 [doi]
- Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel JunctionsAyse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng. 11-1 [doi]
- GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current CollapseFrancesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 11 [doi]
- Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing ApplicationsAsifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit, Oscar H. Gonzalez, P. Srinivasan 0002, Fernando Guarin. 11 [doi]
- New Modelling Off-state TDDB for 130nm to 28nm CMOS nodesTidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho. 11 [doi]
- Exploring Fault Injection Attack Resilience of Secure IC Chips : Invited PaperMakoto Nagata. 11 [doi]
- Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applicationsVamsi Putcha, H. Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert. 11 [doi]
- On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-TransistorsStanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer. 11 [doi]
- Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G ApplicationsMarcello Cioni, Nicolò Zagni, Alessandro Chini. 11 [doi]
- 6G Roadmap for Semiconductor Technologies: Challenges and AdvancesNed Cahoon, P. Srinivasan 0002, Fernando Guarin. 11 [doi]
- Middle-of-the-Line Reliability Characterization of Recessed-Diffusion-Contact Adopted sub-5nm Logic TechnologySeongkyung Kim, Ukjin Jung, Seungjin Choo, Kihyun Choi, Tae-Jin Chung, Shin-Young Chung, Euncheol Lee, Juhun Park, Deokhan Bae, Myungyoon Um. 11 [doi]
- AC TDDB Analysis for HK/IL Gate Stack Breakdown and Frequency-dependent Oxygen Vacancy Trap Generation in Advanced nodes FinFET Devices by SILC Spectrum MethodologyP. S. Chen, Y. W. Lee, D.-S. Huang, S. C. Chen, C. F. Cheng, J. H. Lee, Jun He. 11 [doi]
- DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour. 11 [doi]
- Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacksBrecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den bosch, Ben Kaczer, Jan Van Houdt. 12-1 [doi]
- Characterization and Analysis of RF Switches in SOI Technology for ESD ProtectionJian Liu, Nathaniel Carels, Nathaniel Peachey. 13-1 [doi]
- Voltage Surges by Backside ESD Impacts on IC Chip in Flip Chip PackagingTakuya Wadatsumi, Kohei Kawai, Rikuu Hasegawa, Takuji Miki, Makoto Nagata, Kikuo Muramatsu, Hiromu Hasegawa, Takuya Sawada, Takahito Fukushima, Hisashi Kondo. 14-1 [doi]
- A Novel Latch-Up-Immune DDSCR Used for 12 V ApplicationsZhihua Zhu, Songyan Wang, Xiaomei Fan. 15-1 [doi]
- Numerical Simulation and Characterization of PCB WarpageM. Hamid, K. O'Connell, J. Bielick, J. Bennett, E. Campbell, A. Alfoqaha. 16-1 [doi]
- Adhesion-Limit in Refractory Transition Metal (Mo) Contact Relay Operation at 300 °C - Avoiding Overestimation for Modern ICsSushil Kumar, Dhairya Singh Arya, Manu Garg, Pushpapraj Singh. 17-1 [doi]
- Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI TechnologyJunjun Zhang, Fanyu Liu, Bo Li, Yang Huang, Siyuan Chen, Yuchong Wang, Jiajun Luo, Jing Wan. 18-1 [doi]
- Failure Analysis of AlGaN/GaN Power HEMTs through an innovative sample preparation approachR. L. Torrisi, Salvatore Adamo, Mario Santo Alessandrino, Cettina Bottari, Beatrice Carbone, M. Palmisciano, Elisa Vitanza. 19-1 [doi]
- Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETsD. Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 20-1 [doi]
- Impact of Gate Offset on PBTI of p-GaN Gate HEMTsEthan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo. 21-1 [doi]
- Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage StressesJoseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang 0003, Qiang Li, Wataru Saito, Yuhao Zhang. 22-1 [doi]
- Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOINitanshu Chauhan, Chirag Garg, Kai Ni, Amit Kumar Behera, Sarita Yadav, Shashank Banchhor, Navjeet Bagga, Avirup Dasgupta, Arnab Datta, Sudeb Dasgupta, Anand Bulusu. 23-1 [doi]
- Effect of Non-identical Annealing on the Breakdown Characteristics of Sputtered IGZO FilmsRishabh Kishore, Kavita Vishwakarma, Arnab Datta. 24-1 [doi]
- Frequency dependant gate oxide TDDB modelM. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo. 25-1 [doi]
- Robust Off-State TDDB Reliability of n-LDMOSWen Liu, Dimitris P. Ioannou, Johnatan Kantarovsky, Byoung Min, Tanya Nigam. 26-1 [doi]
- Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacksAndrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf. 27-1 [doi]
- A Realistic Modeling Approach To Explain the Physical Mechanism of TDDB For Automotive Grade-Zero ApplicationsC.-H. Yang, P. S. Chien, Y. S. Cho, W. S. Hung. 28-1 [doi]
- Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash MemoryJuwon Lee, Junho Seo, Jeonghun Nam, YongLae Kim, Ki-Whan Song, Jai Hyuk Song, Woo-Young Choi. 29-1 [doi]
- An Abnormal Negative Temperature Dependence of Erasestate Vt Retention Shift in 3-D NAND Flash MemoriesY. H. Liu, Y.-S. Yang, T. C. Zhan, M. Hu, Z. J. Liu, W. Lin, A.-C. Liu, Y. C. Hsu. 30-1 [doi]
- Investigation of Retention Characteristics in a Triple-level Charge Trap 3D NAND Flash MemoryYunjie Fan, Zhiqiang Wang, Shengwei Yang, Kun Han, Yi He. 31-1 [doi]
- High-k MIM dielectric reliability study in 65nm nodeRavi Achanta, V. McGahay, S. Boffoli, C. Kothandaraman, J. Gambino. 32-1 [doi]
- Effect of OTS Selector Reliabilities on NVM Crossbar-based Neuromorphic TrainingWen Ma, Tung Thanh Hoang, Brian Hoskins, Matthew W. Daniels, Jabez J. McClelland, Yutong Gao, Gina C. Adam, Martin Lueker-Boden. 35-1 [doi]
- Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristicsJames Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen. 36-1 [doi]
- Investigation on Contacts Thermal Stability for 3D Sequential IntegrationS. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, H. Yang, Z. H. Wu, Y.-L. Li, J. F. Gao, A. Y. Du, J. F. Li, J. Luo, W.-W. Wang, H. X. Yin. 37-1 [doi]
- Applying Universal Chip Telemetry to Detect Latent Defects and Aging in Advanced ElectronicsEvelyn Landman, Alex Burlak, C. Nir Sever, Marc Hutner. 38-1 [doi]
- Pre-O2 treatment for LNA gate oxide leakage improvementZheng Ke, Sachin Goyal, Solomon Arputharaj, Wendy Wee Yee Lau, Tan Tam Lyn, Lim Dau Fatt, Pandurangan Madhavan, Chandrasekar Venkataramani. 39-1 [doi]
- Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash MemoryBu-Il Nam, Young-Ha Choi, Sungki Hong, Ki-Young Dong, Wontaeck Jung, Sang-Won Park, Soon-Yong Lee, Dooyeun Jung, Byoung-Hee Kim, Eun-Kyoung Kim, Ki-Whan Song, Jai Hyuk Song, Woo-Young Choi. 40-1 [doi]
- An Analytical Model of Transient Response of MEMS under High-G shock for Reliability AssessmentTianfang Peng, Zheng You. 41-1 [doi]
- The Optimal Shape of MEMS Beam Under High-G Shock Based on a Probabilistic Fracture ModelTianfang Peng, Zheng You. 42-1 [doi]
- NBTI Characterization with in Situ Poly HeaterYu-Hsing Cheng, Michael Cook, Derryl D. J. Allman. 43-1 [doi]
- A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test StructuresT. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, Mahesh Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X. L. Zhao, J. M. Koo, K. Cho, G. W. Zhang. 45-1 [doi]
- Infant Mortality and Wear-Out Failures in Polymer and MnO2 Tantalum CapacitorsAlexander Teverovsky. 46-1 [doi]
- Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studiesA. Viegas, K. Falidas, T. Ali, Kati Kühnel, R. Hoffmann, Clemens Mart, M. Czernohorsky, J. Heitmann. 47-1 [doi]
- Nanoscale Analysis of Breakdown Induced Crack Propagation in DTSCR DevicesXinqian Chen, Fei Hou, Zuoyuan Dong, Yuxin Zhang, Chaolun Wang, Fang Liang, Feibo Du, Zhiwei Liu, Xing Wu. 48-1 [doi]
- Insights on Inter-metal Reliability Assessment of High Voltage InterconnectsKwang Sing Yew, Ran Xing Ong, Hin Kiong Yap, Wanbing Yi, Jacquelyn Phang, R. Chockalingam, Juan Boon Tan. 49-1 [doi]
- Degradation Behaviors of 22 nm FDSOI CMOS Inverter Under Gigahertz AC StressYaru Ding, Wei Liu, Yiming Qu, Liang Zhao, Yi Zhao. 50-1 [doi]
- Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrierZ. Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J. T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz. 51-1 [doi]
- Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS TransistorsBikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam. 52-1 [doi]
- Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor DevicesTaiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shin-Young Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida. 53-1 [doi]
- Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error ReliabilityK. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, Takaho Tanigawa, Shoji Ikeda, Takamitsu Shinada, Hiroki Koike, Tetsuo Endoh, T. Makino, Takeshi Ohshima. 54-1 [doi]
- Modeling Time and Bias Dependence of Classical HCD Mechanism (Peak ISUB Stress) in n-MOSFETsHimanshu Diwakar, Karansingh Thakor, Souvik Mahapatra. 55-1 [doi]
- Decoupling of NBTI and Pure HCD Contributions in p-GAA SNS FETs Under Mixed VG/VD StressNilotpal Choudhury, Ayush Ranjan, Souvik Mahapatra. 56-1 [doi]
- Optimized LDMOS Offering for Power Management and RF ApplicationsSalvatore Cimino, J. Singh, J. B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan 0002, O. Gonzales, M. Hauser, M. Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib. 57-1 [doi]
- Reverse Body Bias Dependence of HCI Reliability in Advanced FinFETMd Iqbal Mahmud, Rakesh Ranjan, Ki-Don Lee, Pavitra Ramadevi Perepa, Caleb Dongkyun Kwon, Seungjin Choo, Kihyun Choi. 58-1 [doi]
- Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device PerformanceLuca Pirro, P. Liebscher, C. Brantz, M. Kessler, H. Herzog, Olaf Zimmerhackl, R. Jain, E. Ebrand, K. Gebauer, M. Otto, Alban Zaka, Jan Hoentschel. 59-1 [doi]
- SiGe Gate-All-around Nanosheet ReliabilityHuimei Zhou, Miaomiao Wang, Ruqiang Bao, Curtis Durfee, Liqiao Qin, Jingyun Zhang. 60-1 [doi]
- Failure analysis addressing method of optically undetected defectivity on 4H-SiC PowerMOSFET epitaxial layerMario Santo Alessandrino, Beatrice Carbone, Francesco Cordiano, Bruna Mazza, Alfio Russo, W. Coco, Massimo Boscaglia, A. Di Salvo, A. Lombardo, D. Scarcella, Elisa Vitanza, Patrick Fiorenza. 61-1 [doi]
- Static Performance and Reliability of 4H-SiC Diodes with P+ Regions Formed by Various Profiles and TemperaturesStephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Justin Lynch, Yafei Liu, Balaji Raghothamachar, Minseok Kang, Anant Agarwal, Nadeemullah Mahadik, Robert Stahlbush, Michael Dudley, WoongJe Sung. 62-1 [doi]
- Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETsJunji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi. 63-1 [doi]
- Characteristic Degradation of Power MOSFETs by X-Ray Irradiation and Their RecoveryMasato Shiozaki, Takashi Sato. 64-1 [doi]
- Defects in 4H-SiC epilayers affecting device yield and reliabilityRobert Stahlbush, Nadeemullah A. Mahadik, Peter Bonanno, Jake Soto, Bruce Odekirk, WoongJe Sung, Anant K. Agarwal. 65-1 [doi]
- Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS CapacitorsYutaka Terao, Takuji Hosoi, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. 66-1 [doi]